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Gurram Jashuva Gabbilam Pdf Download


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Mar 12, 2020 Published In: PDF by ADITYA P ISBN: 9787873265902 Book Title: Gurram Jashuva Gabbilam Pdf Download Mar 8, 2020 Gurram Jashuva – Gabbilam purohita – pdf Mar 12, 2020 Published In: PDF by ADITYA P ISBN: 9787873265902 Chapter I – Jashuva's Life and Career . Gurram Jashuva PDF Gabbilam Download References Category:20th-century Indian poets Category:Indian male poets Category:1895 births Category:1971 deaths Category:People from Guntur district Category:Writers from Andhra Pradesh Category:20th-century Indian male writersThe present invention relates to a nitride semiconductor device and its fabrication method, and more specifically, to a nitride semiconductor device that comprises a capacitor on a nitride semiconductor chip, and its fabrication method. Field-effect transistors (FETs) that use a III-V group compound such as AlGaInN (Aluminium gallium indium nitride) as a nitride semiconductor have a higher breakdown voltage and a higher maximum operation frequency than those of conventional FETs that use silicon (Si) as a semiconductor material. Accordingly, the III-V FETs are expected to be used for high-voltage and high-power switches in a high-power/high-frequency-rated amplifier circuit and the like, and for high-frequency and high-power switching devices. A conventional GaN (gallium nitride)-FET has a two-dimensional electron gas (2DEG) layer formed on the channel layer due to a piezoelectric polarization effect in a GaN (gallium nitride) film. A drain electrode and a source electrode are formed in contact with this 2DEG layer. However, a contact resistance of the drain electrode and the 2DEG layer and a contact resistance of the source electrode and the 2DEG layer are high in this conventional GaN-FET. Accordingly, this conventional GaN-FET is unsuitable for a high-speed device. To overcome this shortcoming, Japanese Laid-Open Patent Application No. 2001-127248, which is incorporated herein by reference,




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